| 摘要 |
PURPOSE: A fabrication method of a semiconductor device is provided to prevent an undesirable etching of a nitride pattern or a nitride spacer and thereby to prevent an electrical short between gate electrodes. CONSTITUTION: When a silicon substrate(21) having a trench-type isolation layer(22) defining an active region is provided, a gate layer is deposited on the substrate(21) and then nitride patterns(24) are formed on the gate layer at regular intervals. Gate electrodes(23) are formed by selective etching of the gate layer through the nitride patterns(24). Next, insulating spacers(25) are formed on sidewalls of both the gate electrodes(23) and the nitride patterns(24). Then, a first conductive layer(26) is deposited over all surfaces, and partly removed to remain over only the active region. Next, an oxide layer is deposited over all surfaces, and partly removed to expose the conductive layer(26). Then, a second conductive layer(30) is deposited over all surfaces. Finally, while the nitride pattern(24) acts as a polishing stop layer, the first and second conductive layers(26,30) and the oxide layer are all polished.
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