| 摘要 |
PURPOSE: A semiconductor device is provided to reduce capacitance between a dummy active region and a metal line to improve property of the device such as delay of a signal transmitting through the metal line. CONSTITUTION: A semiconductor device comprises a dummy active region(5) between field oxides(2) on a substrate(1), an interlayer insulating layer(3) over the dummy active region(5) and the field oxides(2), and a metal line(4) over a portion of the interlayer insulating layer(3) which is over the dummy active region(5), wherein the dummy active region(5) is doped with counter impurities to the substrate(1).
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