FABRICATION METHOD OF SEMICONDUCTOR DEVICE HAVING ELECTROSTATIC DISCHARGE PROTECT ELEMENT

摘要

PURPOSE: A fabrication method of semiconductor device having electrostatic discharge protect element is provided to counter-dope counter conduction type impurity of low density into the bottom center of a junction area to reduce capacitance in the junction area, thereby enhancing performance and reliability. CONSTITUTION: A fabrication method of semiconductor device having electrostatic discharge protect element comprises steps of: forming a device division insulation film defining an active area; forming a photosensitive film pattern protecting the active area; forming a p-well by ion injection of impurity; removing the photosensitive film pattern; forming a n+ ion injection area by ion injection of n+ impurity; and forming a n+ impurity diffusion area which both edges are overlapped to the p-well.