METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming capacitor of semiconductor device is provided to form a cylinder type capacitor by a simple and stable process using two contact masks, thereby enhancing performance and reliability. CONSTITUTION: A method for forming capacitor of semiconductor device comprises steps of: forming a first etching barrier layer and patterning it using a first storage electrode contact mask; forming an interlayer insulation film; forming a second etching barrier layer and patterning it using a second storage electrode contact mask; etching the insulation film and a lower insulation layer using the first/second etching barrier layers to form a storage electrode contact hole exposing the substrate; forming a first conductor; forming a sacrifice insulation film filling the contact hole; forming a cylinder type storage electrode by flattening etching process; and forming a second conductor consisted in a dielectric film and a plate electrode.