METHOD FOR FORMING DUAL DAMASCENE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming dual damascene of a semiconductor device is provided to dual damascene by using a contact etch process and a line/space etch process. CONSTITUTION: A method for forming dual damascene of a semiconductor device comprises the following steps. A first oxide layer and a silicon oxynitride layer are formed sequentially on an upper portion of a semiconductor substrate formed with a contact plug for bit line and storage node. A bit line contact mask is formed on the silicon oxynitride layer. Bit line contact patterns are defined by removing selectively the silicon oxynitride layer. The bit line contact mask is removed. A second oxide layer is formed the exposed upper portion of the whole structure. A bit line damascene mask is formed thereon. A line/space pattern and a bit line contact pattern are formed simultaneously by removing the first oxide layer.