METHOD FOR FORMING PLUG POLY OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a plug poly of a semiconductor device is provided to simplify a manufacturing process of a plug poly by using a chemical mechanical polishing process. CONSTITUTION: A method for forming a plug poly of a semiconductor device comprises the following steps. An isolation layer(3) and a poly-1 are formed on an upper portion of a semiconductor substrate(1). A mask oxidation process is performed to insulate the poly-1(11) and a next forming plug poly. The plug poly is deposited on an upper portion of the whole structure. The deposited plug poly is flattened. An isolation mask is formed on the upper portion of the structure in order to separate an active area and an isolation area. The plug poly located on the isolation area is etched and removed by using the isolation mask as an etch mask. A first interlayer dielectric(19), a flattening insulating layer, and a second interlayer dielectric(23) are formed on the upper portion of the whole structure. The insulating layer is etched to expose an upper portion of the plug poly by using a poly-2 contact mask(27) and a poly-2 contact hole is formed therefrom.