METHOD OF FORMING CONTACT IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a contact is provided to prevent a remainder of a polysilicon from remaining and an erosion and dishing phenomenon from being induced by performing a polishing process by use of slurry for a polysilicon polishing. CONSTITUTION: In a method of forming a contact, a high-density plasma oxide film as an interlayer insulation film(2) is formed on a semiconductor substrate so as to have a thickness of 3000 to 10000 Angstroms. The high-density plasma oxide film is polished chemically and mechanically by use of slurry for an oxide film. A contact hole is formed by etching the interlayer insulation film(2) selectively. A polysilicon contact plug(7) is formed by depositing a polysilicon so as to fill up the contact hole sufficiently. An excessively deposited polysilicon is removed by a chemical mechanical polishing process by use of slurry for a polysilicon polishing.