| 摘要 |
PURPOSE: A method for fabricating a capacitor is provided to improve a surface characteristic and an adhesion force between a platinum film for a lower electrode and an oxide film for an interlayer insulation. CONSTITUTION: In a method for fabricating a capacitor, a flattened interlayer insulation oxide film(20) is formed on a wafer, and a TiAlN film(21) as an adhesion layer is formed on the flattened interlayer insulation oxide film(20) so as to have a thickness of 50 to 300 Angstroms. A titanium film(22) for a lower electrode is deposited on the TiAlN film(21) by a sputtering method so as to have a thickness of 1000 to 3000 Angstroms. A rapid thermal annealing is executed immediately after depositing the TiAlN film(21), so that a TiAlNO film(21a) is formed at a surface of the TiAlN film(21). A ferroelectric film(23), a platinum film(24) and a TiAlN film(25) are sequentially formed on the platinum film(22). A capacitor is formed by etching the films(25-21).
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