METHOD FOR PRODUCING DRAM CELL

摘要

PURPOSE: A method for producing a DRAM(dynamic random access memory) cell is to simplify a process by not using a step of forming a contact hole until a capacitor node electrode is formed and to utilize a conventional exposing equipment in highly integrated elements. CONSTITUTION: A method for producing a DRAM comprises the steps of: defining a semiconductor substrate as a field region and an active region having a stairway shape; forming a gate line(23) in a direction crossing the active region; forming many bit lines formed in a direction crossing the gate line and connected to the active region; forming an insulation layer(25) masking a central part of the active region; forming a capacitor node electrode(26) connected directly to both side edge areas of each of the active regions; forming a cap insulation film above the gate line and forming insulation side walls on both sides of the gate line.