METHOD FOR FABRICATING MOS TRANSISTOR

摘要

PURPOSE: A method for fabricating a MOS transistor is provided which improves the characteristics and the reliability of the MOS transistor by preventing the short channel effect and the punch-through phenomenon. CONSTITUTION: According to the method, the short channel effect and the punch-through phenomenon in case that the channel length is shortened by deepening the device integration is prevented by forming an insulation film pattern which can restrict the formation of a channel between a source and a drain. The method includes: a channel restricting area and device formation region forming step of depositing an insulation film, forming an insulation film pattern by patterning the insulation film and growing an epilayer(3) for the insulation film pattern to be buried; a gate forming step of forming a gate(5) on top of the epilayer corresponding to the top region of the insulation film pattern; a lightly doped source/drain forming step of forming a lightly doped source/drain(6) on the bottom of the side epilayer of the gate; and forming a side wall(7) on the side of the gate and forming a heavily doped source/drain forming step of forming a heavily doped source/drain(8) on the bottom of the side epilayer of the side wall.