| 摘要 |
A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm<SUP>2</SUP>) provided that it satisfies the relation: <?in-line-formulae description="In-line Formulae" end="lead"?>log<SUB>10</SUB>N<=-0.02 (E-350),<?in-line-formulae description="In-line Formulae" end="tail"?> where N is the number of shots of the pulsed laser beam. |
