METHOD FOR MEASURING COMA ABERRATION OF SEMICONDUCTOR EXPOSURE EQUIPMENT

摘要

PURPOSE: A method for measuring coma aberration of semiconductor exposure equipment is provided to produce stably a coma aberration value by measuring a shift of a pattern size of a portion which is not much effected by a pattern profile. CONSTITUTION: A method for measuring coma aberration of a semiconductor exposure equipment comprises the following steps. An isolation pattern(19) larger than both sides of a pattern repeated with lines and spacers is formed on a reticle. A pattern is formed on a photoresist by using the reticle. A coma aberration is calculated by measuring a distance from one side of the isolation pattern to a line pattern(20) of a center portion.