| 摘要 |
PURPOSE: A ferroelectric capacitor of a semiconductor device and a method for manufacturing the same are to soften a surface roughness of a SBT((Sr,Bi)Ta2O9) thin film, and elaborate the film quality. CONSTITUTION: A ferroelectric capacitor of a semiconductor device using a SBT thin film as a dielectric comprises a lower electrode conductive film(21) provided on a predetermined lower layer(20), a first BST thin film(22) provided on the lower electrode conductive film, a second BST thin film(23) provided on the first BST thin film, and an upper electrode conductive film(24) provided on the second BST thin film. The first BST thin film consists of a crystal particle of the BST. The second BST thin film consists of a crystal core of the BST. The first BST thin film has a thickness of 1500-2500 angstrom, and the second BST thin film has a thickness of 200-500 angstrom.
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