A METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to suppress the generation of void in an interlayer insulating film and plugs and increase the width of gate sidewall on a peri region, thereby preventing the generation of hot carriers due to a short-channel effect. CONSTITUTION: First, an active device region is formed by forming a field insulation layer(32) on a first conductivity type semiconductor substrate(31). Then, a gate oxide(33) is formed on the exposed active region surface and several gates(34) and a cap insulation layer(35) are formed along the direction perpendicular to the active region. Next, a second conductivity type impurity region is formed in the exposed active region and several sidewall spacers(37-1) are formed on the sides of the gates. Then, a conductive layer for contacting the impurity region is formed between the gates. Next, several plugs(41) are formed by forming the conductive layer such that the plugs contact the impurity region. Finally, an insulating interlayer(42) is formed where the plugs are not formed between the gates.