METHOD FOR FORMING FINE METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming fine metal wiring of semiconductor device is provided to use Ti/TiSi2 film or Ti/CoSi2 film having excellent step coverage as a contact plug or a metal wiring, thereby preventing the generation of voids in the contact and short-circuit. CONSTITUTION: A method for forming fine metal wiring of semiconductor device comprises steps of: forming an interlayer dielectric on a silicon semiconductor substrate; removing the interlayer dielectric on a portion to become as a metal wiring contact to form a contact hole; sequentially forming a Ti film and a TiSi2 film to fill the contact hole; and reacting the Ti film and Si component of the substrate to generate TiSi2 and floating the TiSi2 film to fill the contact hole.