METHOD FOR FABRICATING TRANSISTOR

摘要

PURPOSE: A method for fabricating a transistor is provided to reduce a short channel effect and a hot carrier effect by increasing a depletion layer at a junction region. CONSTITUTION: A method for fabricating a transistor comprises forming a gate oxide layer(12) and a polysilicon layer(13) sequentially on a semiconductor substrate(11) and patterning the layers(12,13) to form a gate electrode. Impurity junction regions of a low concentration are formed at the semiconductor substrate by a low-concentration ion implantation method by using the gate electrode as a mask. Spacers consisting of an insulation material are formed at both sidewalls of the gate electrode. High-concentration impurity junction regions(16) are formed at the substrate by a high-concentration ion implantation by using the gate electrode and the spacers as a mask. A silicide film(17) is formed on a resultant structure by a silicide process. After removing the spacer, an impurity of an opposed type to the substrate is implanted by using the silicide film(17) as a mask.