| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a short appearance between a capacitor and a bit line by forming a bit line contact hole by a self aligned process. CONSTITUTION: In a method for fabricating a semiconductor device, an insulation layer is formed on an entire surface of a silicon substrate(30) comprising a gate(32), and then a first contact hole is formed in order to a lower electrode contact plug and a bit line contact plug. A polysilicon layer is deposited so as to bury the first contact hole, and is patterned to form a lower electrode contact plug(36) of a capacitor and a bit line contact plug(35). An interlayer insulation layer(37) is deposited over an entire surface of the substrate, and a second contact hole is formed so as to expose an upper surface of the lower electrode contact plug(35). In the second contact hole are sequentially formed a lower electrode(37) and a dielectric film(39). A polysilicon layer(40) is deposited on the dielectric film and the interlayer insulation layer(37) so as to bury the second contact hole. A first nitride film(41) is deposited on the doped polysilicon layer(40). An upper electrode(400) is formed by patterning the first nitride film and the doped polysilicon layer so that the doped polysilicon layer and the first nitride film are remained on the interlayer insulation layer. A second nitride film(410) is formed on the resultant structure, and then is etched back to form a sidewall spacer(42). A second contact hole is formed to expose a surface of the bit line contact plug, and a polysilicon layer is deposited on an entire surface of the resultant structure. A bit line(43) is formed by patterning the polysilicon layer.
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