DATA INPUT CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A data input circuit of a semiconductor memory device is provided to latch internal data exactly by introducing a delay conversion circuit using operation frequency information at an input device. CONSTITUTION: A data input circuit of a semiconductor memory device comprises an input buffer(10) which buffers input data(DQ) from the exterior. A frequency sensing part(16) senses an operation frequency of an external main clock(CCLK) to generate a decoding output signal(F(n)). An internal clock generating part(14) receives the main clock(CCLK) and a data strobe clock(DCLK) to output an internal data strobe clock(IDCLK). A frequency control delay part(18) selectively controls a delay time of the buffered output signal(DIN) in response to the decoding output signal(F(n)), and generates a conversion delay output signal(DIN_D). A data latch part(12) latches the conversion delay output signal(DIN_D) in synchronization with the internal data strobe clock(IDCLK).