发明名称 METHOD FOR SPUTTERING HIGH VACUUM MAGNETRON USING ION BEAM
摘要 PURPOSE: A sputtering method of high vacuum magnetron using an ion beam is provided to operate a magnetron sputtering in a high vacuum by supplying an ion around a target with using the ion beam. CONSTITUTION: An inside of a vacuum container(1) is filled with 1X10¬-4Torr by injecting an argon gas inside a discharging gas container(9) when the vacuum container(1) is reached about 1X10¬-6Torr by ventilating with a turbo molecular pump. An ion beam(6) is operated and an ion generated from the ion beam(6) is supplied to a target(7) and a substrate(3) at the same time. Because a magnetron sputtering(2) is installed to inclined face of the ion beam(6), the ion generated from the ion beam(6) is sent to the target(7) and the substrate(3) installed in the magnetron sputtering(2). When a voltage over 400V is fed to the target(7) through a voltage feeding device of sputtering(11), a plasma is generated around the target(7) by generating the magnetron sputtering(2). To inject oxygen or nitrogen in a reacting gas container(8) into the vacuum container(1) through the gas inlet(12), an intended thin film of compound is deposited.
申请公布号 KR20000041638(A) 申请公布日期 2000.07.15
申请号 KR19980057577 申请日期 1998.12.23
申请人 POHANG RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY 发明人 PARK, HYEONG GUK;JEONG, JAE IN
分类号 C23C14/35;C23C14/46;(IPC1-7):C23C14/35 主分类号 C23C14/35
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