CAPACITOR FABRICATION METHOD OF MEMORY DEVICE

摘要

PURPOSE: A capacitor fabrication method of a memory device is to decrease thickness of an effective oxide in thin dielectric film of the capacitor, thereby enhancing leakage current capability. CONSTITUTION: A capacitor fabrication method of a memory device comprises the steps of: forming a first metal layer(104) of noble metal system on a semiconductor substrate as the lower electrode; forming a crystallized tantalum oxide(105) on the first metal layer; forming an amorphous tantalum oxide(106) on the crystallized tantalum oxide; and forming a second metal layer of noble metal system on the amorphous tantalum oxide as the upper electrode. The first and second metal layer is one selected from the group consisting of ruthenium(Ru), platinum(Pt) and iridium(Ir).