METHOD FOR FORMING GATE ELECTRODE OF THIN FILM TRANSISTOR

摘要

PURPOSE: A method for forming a gate electrode is to improve a reliability and a productivity by preventing occurrence of a hillock phenomenon on a side surface of an aluminium film and occurrence of a tip phenomenon while a molybdenum film is etched. CONSTITUTION: A method for forming a gate electrode of a thin film transistor comprises the steps of: depositing an aluminium film(12) on an insulation substrate; depositing a molybdenum film(13) on the aluminium film so that the molybdenum film has a stress to a compression force by applying a deposition voltage between 14 and 16 kW; forming a photosensitive film pattern on the molybdenum film; and etching the molybdenum film and the aluminium film by accomplishing a wet type etching process having the photosensitive film pattern as a mask. The photosensitive pattern is baked at a temperature between 110 and 120°C.