METHOD FOR FORMING CONDUCTIVE LINE

摘要

PURPOSE: A method for forming a conductive line is provided to be capable of forming a conductive line having twice an integration degree in a conventional pitch. CONSTITUTION: A method of forming a conductive line comprises forming a first insulating layer(1) on a silicon semiconductor substrate. A first conductive line(2) is formed on the first insulating layer(1). A second insulating layer(3) is formed on an entire surface of a resultant structure. A second conductive material(4) is formed on an entire surface of a resultant structure. The second conductive material(4) is etched by a chemical mechanical polishing method until the first conductive line(2) is exposed. A third insulating layer(5) of a flat upper surface is formed on an entire surface, and a third conductive line(6) is formed on the third insulating layer(5).