METHOD FOR FORMING CONTACT METAL FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact metal film of a semiconductor device is provided to reduce the working time of a polishing process by uniformly depositing the contact metal film. CONSTITUTION: An insulation layer(3) including a contact hole(H) is formed on an upper portion of a conductive layer(1). Gas including atoms forming a contact metal film(7) are exposed to the upper portion of the insulation layer(3) and an inner wall of the contact hole(H). Then, a plasma process is carried out to return the atoms forming the contact metal film(7), so that the atoms are deposited to the upper portion of the insulation layer(3) and an inner wall of the contact hole(H). The gas exposing process and the plasma process are performed at least one time.