MOS TRANSISTOR HAVING GATE ELECTRODE CONSISTING OF METALLIC LAYER

摘要

PURPOSE: A MOS transistor with a gate electrode is to reduce a resistance of a gate electrode so as to provide a thermal stability and low specific resistance thereto. CONSTITUTION: A MOS transistor with a gate electrode comprises a gate insulation layer(3) on a semiconductor substrate(1) such as a silicon wafer, and a gate electrode(10) including a metallic layer pattern(9a) on the gate insulation layer, the gate insulation layer being formed from a silicon oxidation layer, the gate electrode consisting of a barrier metallic layer pattern(7a) and metallic layer pattern laminated serially on the insulation layer, and the MOS transistor further comprising a polysilicon layer pattern(5a) between barrier metallic layer and gate insulation layer.