METHOD FOR ETCHING POLYSILICON LAYER FOR FORMING STORAGE NODE

摘要

PURPOSE: A method for etching a polysilicon layer for forming a storage node is provided to enhance productivity by improving a low etch rate of a polysilicon layer. CONSTITUTION: A method for etching a polysilicon layer for forming a storage node comprises the following steps. A dry etch process for a polysilicon layer is performed by using a polysilicon layer and a photoresist pattern(18) having an etch selectivity as a mask. The dry etch process is performed by etching gases containing an O2 gas. The etch gases comprises the O2 gas of 1 sccm to 10 sccm, a Cl2 gas of 40 sccm to 200 sccm, and an SF6 gas of 3 sccm to 10 sccm.