METALIZATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metalization of a semiconductor device is provided so as to form a metal-silicide layer having an uniform thickness and concentration at the low surfaces of the contact holes, and also at the interior sidewalls of the contact holes too, so that a contact resistance may be improved all the more. CONSTITUTION: A method forming the metalization of the semiconductor device contains the following steps: a step to furnish the silicon substrate to form an inter-layer dielectric layer having the contact holes; a step to form a barrier metal layer including a silicon layer on the inter-layer dielectric layer including the contact holes; and a step to form the metal-silicide layer through the thermal treatment of the barrier metal layer.