发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor memory device is provided to pre charge a local data bus within a short time by turning a signal detected from sensed data and to increase burst property and AC property. CONSTITUTION: A semiconductor memory device contains a column pre charge controller(130), a column decoder(40) and a sense amplifier(170) and adds a 'FDB' signal. The data of a bit line sense amplifier(50) is loaded on a local data bus and transferred to a data bus sense amplifier(170) to be sensed. Then the sensed data is fed to a global data bus and the FDB signal is enabled at the same time. Thus, the local data bus is pre charged in a Vprc(pre charge voltage) state and the data bus sense amplifier is pre charged or on standby during disabling Yi and PRC in the column pre charge controller and a column decoder(40).
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申请公布号 |
KR20000043193(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980059543 |
申请日期 |
1998.12.28 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
KIM, GANG YONG |
分类号 |
G11C11/407;G11C7/10;G11C11/4096;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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