FABRICATION METHOD OF FERROELECTRIC MEMORY DEVICE

摘要

PURPOSE: A fabrication method of ferroelectric memory device is provided to connect upper electrodes and transistors via contact leading pads, thereby reducing unit area of the cell and preventing the degradation of the memory device. CONSTITUTION: A fabrication method of ferroelectric memory device comprises steps of: forming a lower structure on a substrate having an element division film formed; forming and patterning a first interlayer insulation film to form a contact hole for bit lines and a contact hole for contact leading pads; forming and patterning a first conductive layer to form bit lines and the contact leading pads; forming a second interlayer insulation film and forming and patterning lower electrode material, ferroelectric material and upper electrode material to form a capacitor; forming a third interlayer insulation film; forming a contact hole for exposing the upper electrode and the contact leading pads; and forming local interconnection lines.