FABRICATION METHOD OF SOI DEVICE

摘要

PURPOSE: A fabrication method of SOI(Silicon On insulator) device is provided to realize DT-MOS device controllable threshold voltage in accordance with operational conditions without adding an area for connecting to a gate. CONSTITUTION: A fabrication method of SOI device comprises steps of: sequentially forming a gate insulation film and a first conductor on the SOI substrate on which a lower semiconductor substrate, an embedded insulation film and an upper semiconductor substrate are stacked; sequentially etching the first conductor, gate insulation and upper substrate through lithography and etching processes; forming a second conductor; sequentially etching the second conductor and first conductor through lithography and etching processes defining a portion to become as a gate; and forming a junction area.