METHOD FOR MANUFACTURING DISCHARGE STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a discharge storage electrode of a semiconductor device is provided to prevent the malfunction of the semiconductor device and to improve the reliance of the semiconductor device by preventing the letter key pattern from lifting CONSTITUTION: A semiconductor substrate(11) is formed with a bit line contact plug and a capacitor contact plug(13). A bit line(14) is formed on an insulation film(12) formed on the semiconductor substrate(13). A barrier nitride film(15) and a cap oxide layer(16) are formed on the insulation film(12) which is disposed in a cell area(A) and a letter key pattern area(B). By sequentially etching the cap oxide layer(16) and the barrier nitride film(15), a capacitor contact hole(18) is formed in the cell area(A) and a letter key pattern(390) is formed in the letter key pattern area(B). Then, a polysilicon layer is formed at a side wall of the capacitor contact hole(18). A discharge storage electrode(200) and a negative letter key pattern(190) are formed by removing the cap oxide layer(16) in the cell area(A) and the letter key pattern area(B).