| 摘要 |
PURPOSE: A fabrication method of capacitor for semiconductor device is provided to simplify process and improve the quality of a ferroelectric film, and to prevent implant of hydrogen and H2O into the capacitor, thereby suppressing the characteristics degradation. CONSTITUTION: A fabrication method of capacitor for semiconductor device comprises steps of: forming and patterning a first interlayer insulation film on a substrate to form a first contact hole; embedding metal within the contact hole to form a plug; sequentially forming a first barrier metal layer, an anti-reflective coating layer and a metal layer and then sequentially patterning the metal layer, the anti-reflective coating layer, and the first barrier metal layer to form a lower electrode; forming a first silicon nitride film to expose a portion of the lower electrode; forming and patterning a ferroelectric film and an upper electrode; forming a second metal barrier layer and a second silicon nitride film; patterning the second insulation film, second silicon nitride film and second metal barrier layer; and forming metal wiring.
|
