METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming capacitor of semiconductor device is provided to deposit a thin Pt film and a thick oxide and then remove them by dry etching method to form charge storage electrodes, thereby stabilizing process and increasing capacitance. CONSTITUTION: A method for forming capacitor of semiconductor device comprises steps of: forming a first interlayer insulation film on a substrate and then forming a plug on the insulation film; forming a second interlayer insulation film on the first insulation film and then forming a contact hole to expose the plug; forming a Pt layer for storing charges and a third interlayer insulation film; sequentially etching the third interlayer insulation film and the Pt layer and then removing the third and second insulation films to form charge storage electrodes; and forming a dielectric film and cell plate to complete a capacitor.