| 摘要 |
PURPOSE: A method for fabricating a capacitor is provided to reduce an etch difficulty against a platinum film, and to improve a step coverage of the platinum film. CONSTITUTION: In a method for fabricating a capacitor, an interlayer insulation film(2) is formed on a semiconductor substrate(1), and a contact hole is formed by etching the interlayer insulation film(2) so as to expose an active region of the substrate(1). A storage node contact having sequentially stacked polysilicon plug(3), TiSi2(4) and a barrier metal(5) is formed in the contact hole. A sacrificial insulation film(6) is formed on an entire surface of a resultant structure. A trench is formed by etching the sacrificial insulation film(6) so as to define a storage node region. A seed platinum film is formed on an entire surface so as to have a thickness of 100 to 750 Angstroms, and a platinum film having a thickness of 100 to 2500 Angstroms is formed on the seed platinum film by use of an electroplating method. In the trench and on the platinum film is formed a photoresist film pattern(PR). The platinum film is removed which exists on the sacrificial insulation film(6), and a platinum lower electrode is formed by removing the photo-resist film pattern and the sacrificial insulation film(6).
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