METHOD FOR FABRICATING SRAM DEVICE

摘要

PURPOSE: A method for fabricating a SRAM device is provided which can decrease the difficulty of cell lay out and at the same time can prevent the defect and the decrease of the reliability of a device. CONSTITUTION: A method for fabricating a SRAM device includes the steps of: providing a semiconductor substrate(11) where an isolation film, gate electrodes(12) and junction regions(13) are formed, and a nitride film(15), a first IPO(Inter Poly Oxide)(16) and a second IPO(17) are formed in sequence on the front surface; forming a first contact hole revealing a part of the gate electrode on a top of the isolation film and a part of the junction region adjacent to it, and a second contact hole revealing the junction region between neighboring gate electrodes; depositing a first barrier metal film(18) on the inner wall of the first and second contact holes and on the second IPO, and depositing a tungsten film burying the first and second contact hole on the first barrier metal film; forming a photoresist pattern wider than the second contact hole; forming a buried first tungsten plug and a second tungsten plug(22) of pad shape; removing the photoresist pattern and depositing an oxide on top of the whole structure; etch-back of the oxide until some thickness of the top surface of the second tungsten plug is revealed; and forming a metal line(25) contacted with the revealed second tungsten plug.