METHOD FOR MANUFACTURING PHASE SHIFT MASK OF SEMICONDUCTOR MASK

摘要

PURPOSE: A method for manufacturing a phase shift mask of a semiconductor mask is provided to expose only an etch area of a phase shift pattern. CONSTITUTION: A method for manufacturing a phase shift mask of a semiconductor mask comprises the following steps. A chrome is applied on an upper portion of a quartz substrate(1). A first resist pattern is formed on an upper portion of the chrome layer. A chrome pattern is formed by using the first resist layer as a mask and etching a lower chrome layer. The first resist layer is removed. A second resist layer(7) is applied on an upper portion of a whole structure. The second resist located on a phase shift area is exposed. A part of the second resist is remained by performing a developing process. A rear face of the mask is exposed. A second resist pattern is formed by removing the second resist located on the phase shift area. The exposed quartz substrate is etched and removed. The second resist of the upper portion is removed.