| 摘要 |
PURPOSE: A method for forming a bit line of a semiconductor device is provided to prevent damage of a contact and to reduce a leakage current. CONSTITUTION: To form a bit line in a semiconductor device, first a device isolation layer(12) is formed in a semiconductor substrate(10). Second, a gate electrode(14) such as tungsten silicide and a mask insulating pattern(16) such as oxide are formed on the substrate(10). Third, a lightly doped drain region(18) is formed in the substrate(10). Next, a first and a second insulating spacers(21) are formed on sidewalls of the gate electrode(14) and the mask pattern(16). Then, a first conductive layer and a core oxide layer are deposited and then patterned by photomasking. Thereby, a bit line contact pad(22) having a core oxide pattern thereon is formed. Next, after a third insulating spacer(26) is formed on sidewalls of the contact pad(22) and the core oxide pattern, the core oxide pattern is removed. Then, a second conductive layer is deposited, and a bit line connected to the contact pad(22) is obtained therefrom.
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