| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of depositing a silicon oxide film by plasma CVD, which has good uniformity in film thickness in the wafer surface by processing the wafer surface with an alternate method instead of plasma processing. SOLUTION: A method of depositing a silicon oxide film comprises supplying TEOS(tetraethoxy silane) gas, O2 gas and He gas as raw gas to the surface of a water, and then depositing a silicon oxide film on the wafer by plasma CVD. Before depositing the silicon oxide film by plasma CVD, the wafer is heat-treated in an O2 atmosphere or N2O(nitrous oxide) atmosphere. The heat- treatment is performed under the conditions that the partial pressure of O2 gas with respect to O2 atmosphere or partial pressure of N2O gas with respect to N2O atmosphere is 250 Torrs or higher, the temperature is in the range of 350-450 deg.C, and the heat-treatment time is in the range of 60-300 seconds.
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