| 摘要 |
PROBLEM TO BE SOLVED: To obtain an interlayer insulating film which is low in relative permittivity and has desired heat insulation property by making the insulating film of a semiconductor device, consisting of a polymer which has a principal chain of mesh structure which includes the obtained condensed ring polymerizing a polycyclic compound having at least one substituent. SOLUTION: An interlayer insulating film 12 consisting, for example of, a silicon oxide film is made on a substrate 11, and an insulating film 13 consisting of a polymer having mesh structure of a principal chain which includes a condensed ring is made on this interlayer insulating film 12. That is, the insulating film 13 consists of a polymer, where condensed rings of at least one or more kinds from among naphthalene, anthracene, naphthacene, chrysene, pentane, or the like are introduced into the principal chains within the film structure. This polymer consists of one, where a polycyclic compound is polymerized, and the polycyclic compound may be one which has at least one substituent such as an alkyl group, alkoxyl group, hydroxyl group, amino group, carboxyl group, vinyl group, or the like.
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