| 摘要 |
PROBLEM TO BE SOLVED: To improve yields by not using the portion under the considerable influence of aberration of a reduced projection lens when exposing to transfer circuit patterns. SOLUTION: An ineffective exposed area NG1 under the considerable influence of aberration of a reduced projection lens is previously examined among the maximum possible exposed area FD for a resist on a wafer. The residual portion of the maximum possible exposed area FD from which is subtracted the ineffective exposed area NG1 is defined as an effective exposed area OK1. The portion, where chip patterns CPb to be transferred without faults collects, of the effective exposed area OK1 is defined as an image field IM. In order to form the image field IM, the blind mechanism of a stepper may be utilized, or a new photomask may be made.
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