| 摘要 |
PROBLEM TO BE SOLVED: To realize a device structure which does not cause partial shaving of a gate oxide film or partial shaving of a titanium silicide layer, in a semiconductor device which has titanium silicide electrode structure, and its manufacturing method. SOLUTION: This semiconductor device has a titanium polycide gate structure, and the titanium polycide gate structure is a laminate, where a polysilicon film 102, a titanium silicide film 103, a TiN film 104, and a hard mask layer 105 are laminated in this order via a gate oxide film 101 on a semiconductor substrate, and the sidewall part of the titanium silicide film 103, at least of this stack, is covered with a side protective film.
|
