| 摘要 |
PROBLEM TO BE SOLVED: To prevent bonding to a luminous region and to enable FFP to be in a single-peak pattern, even in the case of power feed to an active layer via an electrode film. SOLUTION: A laser chip 12 is die-bonded to a pedestal 13 and is bonded to bonding wires 14a and 14b at both side parts 23a and 23b of a second electrode film 23 on an upper surface. In the laser chip 12, semiconductor layers 16-19 including an active layer 17 are laminated and formed on a substrate 15, and an SiO2 film 20, a first electrode film 21, an SiO2 film 22, and a second electrode film 23 are successively laminated and formed on the upper surface. In the SiO2 film 20, a part corresponding to a luminous region 17a of the active layer 17 is opened in a stripe shape, while in the SiO2 film 22, a part corresponding to a current injection region which corresponds to the central part of the luminous region 17a is opened, thus injecting current from the central part of the luminous region 17a, even when power is fed via the second electrode film 23, thus enabling FFP in the horizontal direction to be in a single-peak pattern.
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