| 摘要 |
PROBLEM TO BE SOLVED: To enhance high integration of a semiconductor integrated circuit device. SOLUTION: A semiconductor integrated circuit has a gate electrode G, which extends on an active region of a semiconductor layer 4 via a gate insulation film 8 and whose part is extracted on a non-active region (contact region) of the semiconductor layer 4, and a channel forming region which is formed on the semiconductor layer 4, so as to face opposite the gate electrode G and is electrically connected to the non-active region of the semiconductor layer 4, and is provided with a field-effect transistor in which the gate electrode G and the channel forming region are electrically connected. The gate electrode G1 is connected directly to the non-active region of the semiconductor layer 4.
|
