| 摘要 |
PROBLEM TO BE SOLVED: To dissolve deterioration of high frequency property, by providing a compound semiconductor device with a first insulating film at one part of the top and the sidewall of the mesa-shaped part on the first stage of a compound semiconductor film and its periphery, and forming a gate electrode from on this first insulating film to the top of the mesa-shaped part. SOLUTION: Compound semiconductor layers 5 and 6, such as GaAs, AlGaAs, InP, or the like are made in the shape of a mesa in two stages on a silicon substrate 4, and a first insulating layer 8 is made on one part of the top and the sidewall of the mesa-shaped part M1 on the first stage of these two stages of mesa regions M1 and M2 and at its periphery. Then, a gate electrode 1' is made from the top part of the mesa region M2 on the second stage onto the first insulating layer 8, and further second and third insulating layers 9 and 10 are formed. The gate electrode 1' and a pad 11a are connected with each other through a contact hole C3 in the specified region of the third insulating layer 10, and also the pad 11a of the gate electrode 1' is made on the second insulating layer 9.
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