| 摘要 |
PROBLEM TO BE SOLVED: To prevent contamination on the surface of a sample subject to laser treatment or the change of bonding state of atoms on the surface due to the contact of the surface of the sample with an outside air before laser treatment, in a laser annealing device. SOLUTION: This device is used to crystalize an amorphous semiconductor film with a laser light, and it is provided with a chamber 4 for emitting laser light and at least one heating chamber 3, and further it has such a structure that a sample to be treated can be moved, without being exposed in an outside air between the chambers 4 and 3. |
