发明名称 MULTIPLE QUANTUM WELL TYPE INFRARED-RAY SENSOR
摘要 PROBLEM TO BE SOLVED: To read out independently signals from detecting wavelength bands and directly read out a sum signal and a difference signal of each signal of the signals by a method wherein a and a current integrating means is brought into conduction for a set time, and charged with a current, flowing in multiple quantum well layers, or is discharged. SOLUTION: A transistor T3 for signal readout is connected with a common contact layer 18 as a switch, and a second electrode 19 is provided on a second multiple quantum well layer MQW2. A capacitor Cint for integrating currents flowing in a multiple quantum well layer MQW1 and 2 is connected with the other end of the switch T3. The capacitor Cint is previously charged with a prescribed voltage, and a bias voltage V1 or V2 is applied to either of a first electrode 17 and the electrode 19. Only in the case where the bias voltage is applied, currents to respond to the intensities of infrared rays in detecting wavelength bands flow in the layers 1 and 2 and a capacity being charged in the capacitor Cint is discharged or charged. Thereby, a voltage drop or an increase in a voltage of the capacitor Cint during a prescribed time is measured to detect the intensities of the infrared rays received by the layers MQW1 and 2.
申请公布号 JP2000196133(A) 申请公布日期 2000.07.14
申请号 JP19980372154 申请日期 1998.12.28
申请人 FUJITSU LTD 发明人 MIYAMOTO YOSHIHIRO
分类号 H01L31/10;H01L31/0264;(IPC1-7):H01L31/10;H01L31/026 主分类号 H01L31/10
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