发明名称 GAS INLET NOZZLE FOR SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To uniformly introduce a gas from inlet pipings and increase the number of gas inlet holes in a gas inlet nozzle for semiconductor manufacturing apparatus. SOLUTION: A flow rate control chamber 3 is provided for a gas inlet pipeline 1 so as to make the static pressure of gas to be highest in the pileline 1, and a plurality of gas inlet holes 6 are provided for a partition wall between the chambers 3 and 11. Furthermore, a specific energy loss of a material gas on the outlet side of the chamber 33 is made larger than that on the inlet side thereof, so that the chamber 3 is at a positive pressure.
申请公布号 JP2000195807(A) 申请公布日期 2000.07.14
申请号 JP19980371718 申请日期 1998.12.28
申请人 KYOCERA CORP 发明人 HIMENO OSAMU
分类号 H01L21/302;B05B1/00;H01L21/205;H01L21/3065;(IPC1-7):H01L21/205;H01L21/306 主分类号 H01L21/302
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