| 摘要 |
PROBLEM TO BE SOLVED: To clean an electrode without opening a reaction chamber by applying high frequency voltage and low-frequency voltage to a second electrode at the same time, and introducing an etching gas, and then mounting a substrate to be treated on the first electrode, and applying high-frequency voltage to the second electrode. SOLUTION: A dry etching device 20 is equipped with a pair of counter electrodes 22A and 22B in a reaction chamber 21, and the electrode 22B is supplied with high-frequency power via a coordinator 24B from a high-frequency power source 24A and is supplied with low-frequency power from a low-frequency power source 27A, and cleaning of the second electrode 22B is performed. Next, when a PZT film is dry-etched, a board 23 bearing the PZT film is mounted on the electrode 22A, and dry etching gas is introduced from an inlet port 21A into the reaction chamber 21. Next, an electrode 12B is supplied with high-frequency power via the coordinator 24B. As a result of supply of such high-frequency power, a plasma is made between the electrodes 12A and 12B.
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