发明名称 BIT-LINE SENSE AMPLIFIER FOR SEMICONDUCTOR MEMORY AND ITS DRIVE METHOD
摘要 PROBLEM TO BE SOLVED: To perform pre-charge operation after equalization and to prevent power consumption by transmitting the data loaded to a first bit-line to a sense amplifier, selectively connecting the sense amplifier line with first, second control signals and selectively connecting the sense amplifier line with third, fourth control signals. SOLUTION: First, second bit line cut-off signals BISH1, BISH2, BISL1, BISL2 are made a high state, and a bit line pre-charge voltage VBLP of a half (Vcc) is applied to first, second bit lines BITH, /BITH, BITL, /BITL and the sense amplifier lines SA, /SA. Then, second bit line cut-off signals BISL1, BISL2 are enabled, and the second bit lines BITL, /BITL are connected to the sense amplifier lines SA, /SA, and by conducting the pre-charge operation, the power will not be consumed in a pre-charge process.
申请公布号 JP2000195270(A) 申请公布日期 2000.07.14
申请号 JP19990368184 申请日期 1999.12.24
申请人 HYUNDAI ELECTRONICS IND CO LTD 发明人 RYU TOKUGEN;SETSU EIKO
分类号 G11C11/409;G11C7/06;G11C7/12;(IPC1-7):G11C11/409 主分类号 G11C11/409
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