MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent deterioration of an active layer due to hot carriers and also form high-resistive regions in the active layer in a self-alignment manner by, irradiating second harmonic waves of a pulsed oscillated infrared-ray laser to a semiconductor film on the insulating surface of a semiconductor device. SOLUTION: Low-resistive regions (source/drain regions) 110 and 113 and high-resistive regions 111 and 112 are formed in an active layer by implanting N-impurity ions, such as phosphorus ions in the active layer in a self-alignment manner using a gate electrode and a gate insulating film as masks and thereafter, a silicon nitride film 114 is formed over the entire surface. After this, the impurity ions introduced in the active layer are activated by laser irradiation. It is preferable that the laser beam be pulse-shape, and an infrared laser like an Nd:YAG laser (A Q-switched pulse oscillation is preferable.) visible light laser like its harmonic light or various ultraviolet-ray lasers using excimer, such as KrF, XeCl and ArF excimers, are used.