| 摘要 |
PROBLEM TO BE SOLVED: To ensure excellent bonding pads and to easily control an etching operation by a method wherein an Au alloy layer coming into ohmic contact with a p-type or an n-type compound semiconductor, an oxidized and/or nitrided Mo barrier layer, and an Au bonding pad layer are formed in this sequence. SOLUTION: A wafer is subjected to etching as a pre-treatment to remove foreign objects from the surface of the wafer before an ohmic contact layer of AuBe is formed for attaining an excellent ohmic contact. An ohmic contact layer 5 is formed on the wafer whose surface is processed. In succession, an Mo barrier layer 6 and an Au bonding layer 7 are continuously formed through sputtering. The formed metal layer is formed into an electrode pattern through a photolithography process, the Au bonding pad layer 7 is successively subjected to wet etching, a resist layer is removed, and then a thermal treatment is carried out, and thus an anode electrode forming process is finished. |
